An SAT Approach to Routing of 15nmStandard Cells

碩士 === 元智大學 === 資訊工程學系 === 104 === In spite of rapid progress in semiconductor process technology, the variation in the feature sizes of generated patterns continues to create problems due to prolonging use of 193nm lithography. To scale down the feature sizes continually, more complex design rules...

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Bibliographic Details
Main Authors: Yu-Ting Zhang, 張郁婷
Other Authors: Rung-Bin Lin
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/uv3x2n

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