The case study of IC carrier electroless Ni/Pd/Au process quality improvement
碩士 === 元智大學 === 化學工程與材料科學學系 === 104 === In this study, add KCN dipping treatment and make CN- reacts with Pd ion residue on IC substrate copper line build up by SAP method. Finally we find KCN dipping treatment can effectively improve the issue that electroless Ni/Pd/Au layer depositing on core or p...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52426295216215896345 |
| Summary: | 碩士 === 元智大學 === 化學工程與材料科學學系 === 104 === In this study, add KCN dipping treatment and make CN- reacts with Pd ion residue on IC substrate copper line build up by SAP method. Finally we find KCN dipping treatment can effectively improve the issue that electroless Ni/Pd/Au layer depositing on core or prepreg. At the same time, check there is no side effects of KCN dipping treatment on substrate surface characteristics include both morphology and roughness. It promotes the collocation between electroless Ni/(Pd)/Au and SAP build up process of IC substrate manufacturing. In this study, we use DOE (design of experiment) experiment method and find KCN dipping treatment(20g/L-120seconds) is the optimum parameter.
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