Growth and Characteristics of Two-dimensional Materials Ternary Compounds InGaSe by Molecular Beam Epitaxy
碩士 === 大同大學 === 電機工程學系(所) === 104 === Ternary compounds InxGa1-xSe (0≦x≦6.8 at.%) were grown on c-sapphire by molecular beam epitaxy (MBE). The van der Waals epitaxial layer InGaSe belongs to two-dimensional material. InGaSe is composed of GaSe. The metallic content ratio is controlled by adjusting...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73042961331919092398 |