| Summary: | 碩士 === 國立臺北科技大學 === 材料及資源工程系所 === 104 === Tantalum has high capacitance due to its strong and stable dielectric properties of oxide film. So it is widely used in the electronics industry. On the other hand, in the high-tech industry, desire of high-quality film plating nothing but with high purity target. Therefore, how to make high-purity ingots is very important. The goal of this study is to optimize the parameters of electron beam melting (EBM) of titanium by using Taguchi method, choosing L4 orthogonal array (three factors and two levels) to carry out four experiments of total, then selecting XRD to observe crystal structure, glow discharge mass spectrometry (GDMS) analyze content of elements, the highest purity is 3N8. The lowest oxygen content is 5 ppm of ingot. The observation of metallographic analysis, the average of grain area is about 1.04 cm2. The best melting parameters are determined by Taguchi method: the higher melting power and crucible rolling speed is better than the lower one, the lower refining time is better than the higher one .
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