Application for GCIP Model to Non-volatile Memory in HK/MG NMOSFET
碩士 === 國立臺北科技大學 === 機電整合研究所 === 104 === The MOSFETs oxide thickness is sustained decreases, MOSFETs leakage current be-comes bigger, so use HK / MG replace SiO2 or SiON as the current mainstream method; Leakage current not only cause unnecessary power consumption of the MOSFETs, The memory device to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9n2rp7 |