A New Model for the Saturation Current of Nano-MOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 104 === As IC industries keep making progress, the size of MOSFETs keep scaling down and their current behavior become more difficult to predict. Conventionally, the current of MOSFET is considered only due to drift current. It is believed that as the drain voltage in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ehd57x |