Hot-Carrier Induced Degradation and Its Recovery in HK/MG NMOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 104 === Hot-carrier (HC) effect has always been the major reliability issue to study. In early researches, the worst degradation of HC effect is the DAHC mode at room temperature. However, recent studies reported that the worst case has been switched from DAHC to CHC...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/uey8z6 |