| Summary: | 碩士 === 國立臺北科技大學 === 製造科技研究所 === 104 === In this study, we deposited a thin TiO2 compact layers on ITO/SLG by means of radio frequency(rf) magnetron sputtering.Experimental parameters: (RF: 100W, Base pressure: 5.0×10-6 torr, Process pressure: 10 mtorr, Substrate temperature: 100oC).Through the different gases and film thickness, finally TiO2 annealing 450 oC for 30 min. Analytical instruments using SEM, TEM, XRD and explore the surface of TiO2 film patterns, microstructure and properties of the crystalline phase. In addition, find the best TiO2 by water contact angle and MB absorbance. And then coating porous TiO2 thin film by spin-coating. Finally, photoelectric thin film is finished by sintered at 450oC for 30 min. This article research different thickness of TiO2 compact thin film for DSSC efficient. Confirmed by the experiments, the best of photoelectric conversion efficiency is 8.30 %.
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