Investigating the effect of Nitride-based Light Emitting Diodes Using Hole Injection Layer with different growth temperatures

碩士 === 南臺科技大學 === 電子工程系 === 104 === In order to improve polarization phenomenon of traditional light-emitting diodes between last quantum barrier and electron blocking layer, which caused by the hole injection efficiency droop, we design and investigate Mg doping of P-GaN with different growth tempe...

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Bibliographic Details
Main Authors: Chiang,Kuo-Wei, 江國瑋
Other Authors: Chiou,Yu-Zung
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/ytkceq

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