Investigating the effect of Nitride-based Light Emitting Diodes Using Hole Injection Layer with different growth temperatures

• Main Authors: Chiang,Kuo-Wei, 江國瑋
• Other Authors: Chiou,Yu-Zung
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/ytkceq

碩士 === 南臺科技大學 === 電子工程系 === 104 === In order to improve polarization phenomenon of traditional light-emitting diodes between last quantum barrier and electron blocking layer, which caused by the hole injection efficiency droop, we design and investigate Mg doping of P-GaN with different growth temperature between last quantum barrier and electron blocking layer. The growth temperature of hole injection layer for the LED A, LED B, and LED C were 730, 750, and 780℃, respectively. In the experimental, the light output power of the LED A, LED B, and LED C at an injection current of 120mA were 114.6, 112.52, and 110.47mW respectively. And the efficiency droop were 24.64, 25, and 23.47% respectively. LED A has better power performance, it due to more hole concentration than the others. In the case of low temperature growth at this layer, the concentration of Mg atom could diffusion more into this layer. Because of better current spreading than other device, LED C with less efficiency droop result.