The Effects of Parameters on Uniformity of SiC Film during CVD Process by Numerical Simulation
碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 104 === SiC, with low thermal expansion, high thermal conductivity and hardness, well chemical resistance and high temperature oxidation resistance, has been used for the substrate protection under high temperature such as LED epitaxy, graphite heat sink, carbon...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bhtrkx |