The Study for Parameters in Pulse Laser Grooving Profile for Die Sawing

• Main Authors: PENG, SHENG-FENG, 彭昇峰
• Other Authors: SHIH, MING-CHANG
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/47926024616536219334

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩士專班 === 104 === While semiconductor packages become thinner, lighter, and smaller, the wafer used for dies sawing become thinner and more complex of structure. Recently, laser processing become an effective solution in advance semiconductor package technology, such as laser marking, laser drilling, and laser grooving. Laser grooving is an effective pretreatment way to solve die peeling and cracking after diamond sawing. However, optimization of the laser grooving is difficult to achieve due to the complexity of substrate materials, versatile functions of laser machining, and the specification of the diamond sawing. Previous study showed that the shapes of laser grooving were more effective to the yield in die sawing. This thesis is focused on the control of laser grooving shape for optimization in die sawing. Parameters of laser grooving such as laser power, pulse frequency, cutting speed, masked pattern of beam light are studied to achieve the optimized grooved shape for die sawing. By using laser grooving parameters of dual laser grooving beam of 35um ~ 50um, laser power of 2.6W, and pulse frequency of 40kHz can create the best U-shape grooving structure with dual narrow sides + dual wide sides can achieve the best yield rate after die sawing. By utilizing the same optimization process for the laser grooving parameters, we can extend this approach to set the best die sawing process of other wafer structures.