Realization of Optical Passive Devices with Silicon Photonics Process

• Main Authors: Ming-Ju Tsai, 蔡明儒
• Other Authors: San-Liang Lee
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/76q38u

碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === Silicon phonics circuit has the advantage of simultaneously transmit multiple light signals through a silicon optical waveguide, providing higher transmission speed and wider bandwidth than copper wires. It could fulfill demands of cloud computing and big data application and will become the core technique for next-generation semiconductor chip manufacturing industry. This thesis investigated two different silicon photonics platforms for realizing optical passive devices. The first platform is the silicon-on-insulator (SOI) process provided by IMEC for fabricating optical passive elements. Dense wavelength division multiplexing filters and comb filters are realized with add/drop ring resonator structure. The optical network monitoring devices are realized in terms of the Michelson interferometer structure. The second platform is the TSMC standard 90 nm CMOS process where the thin polysilicon layer is employed for fabricating optical waveguide. Without modifying any parameter in the standard process, the transmission loss of poly silicon waveguide is 112 dB/cm due to surface roughness and material absorption. To reduce such loss, the subwavelength grating waveguide structure is used and the propagation loss is reduced to be below 30 dB/cm. This makes the realization of photonic integrated circuit feasible by using the polysilicon waveguide in standard CMOS process as the building block.