| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === First, we present a triple-band (TB) oscillator was implemented in the TSMC 0.18 μm 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt 4th order LC resonators to form a 6th order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz.
Secondly, a wide locking range nMOS divide-by-2 RLC injection-locked frequency divider (ILFD) was designed and implemented in the TSMC 0.18-μm BiCMOS process. The ILFD is based on a cross-coupled oscillator with one direct injection MOSFET and a RLC resonator. The RLC resonator is used to extend the locking range so that dual-band locking ranges can be merged in one locking range at both low and high injection powers. At the drain-source bias of 0.9 V for switching transistors, and at the incident power of 0 dBm the locking range of the divide-by-2 ILFD is 7.24 GHz.
Finally, we present a wide locking range injection-locked frequency divider (ILFD) using left-handed LC resonator. The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses a capacitive cross-coupled voltage-controlled oscillator (VCO) as the core and also uses one direct injection MOSFET. The dc gate bias of capacitive cross-coupled FETs is smaller than dc drain bias. At the dc drain-source bias of 0.8V and at the incident power of 0 dBm the locking range of the divide-by-2 ILFD is 7.45 GHz.
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