Development of GaN-based phototransistors

• Main Authors: Teng-Po Hsu, 許登坡
• Other Authors: Pinghui Sophia Yeh
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/yz98z3

碩士 === 國立臺灣科技大學 === 電子工程系 === 104 === We report on III-nitrid (III-N) phototransistor action by illuminating ultraviolet photons onto InGaN/AlGaN n-p-i-n heterojunction bipolar in an open-base configuration. And we also report on III-nitrid (III-N) photodector action by illuminating ultraviolet photons onto InGaN/AlGaN p-i-n heterojunction bipolar. Our InGaN/AlGaN npin phototransistor used Silicon diffusion make p-GaN turns into n-GaN.Our phototransistor can get more gain and more external quantun efficiency. P-i-n photodetector external quantun efficiency of 45% and responsivity of 0.14 A/W was measured for the device operationg at reverse bias 3.15V. Peakwavelength is 383 nm. Pin is 15.74 μW/cm2. N-p-i-n phototransistor responsivity of > 1.8A/W was measured for the device operating at collector-to-emitter voltage (VCE) of < 1.56 V in the phototransistor mode.We can get more gain when reverse bias collector leads to a photocurrent as VCE increases. At λ =382 nm, the InGaN/AlGaN p-i-n phototransistor shows a responsivity of > 5 A/W at VCE = 4.71 V. The the InGaN/AlGaN p-i-n phototransistor demostrates the feasibility of using III-N bipolar transistor stuctures and silicon diffusion for low bias and high-sensivity UV photodection applications.