| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 104 === ITO thin films are mainly fabricated on substrate using high vacuum plasma process such as magnetron sputtering. Although suitable for most of inorganic thin film substrate surfaces, magnetron sputtering could not be applied directly for organic thin films, in particular, the active layer of organic semiconductors, owing to their sensitivity towards high energy atoms employed in plasma sputtering process.
In this study, first ITO thin films are sputtered on a sacrificial layer. In short working distance, high applied power and in situ 200°C annealing condition, we obtain an ITO film with low sheet resistance of 9.5Ω/sq and over 80% of the average transmittance in the visible region.
Thereafter we introduce a modified transfer method to successfully transfer ITO thin films onto organic layer surface. The optical and electrical properties, crystallinity and morphology of transferred thin films are characterized by Hall measurement, XRD, SEM and AFM. The transferred ITO shows properties closed to original ITO. By this transfer method, ITO thin films could be utilized as top electrode on organic thin film transistor devices without damaging the organic dielectric layer. After testing, we found that transferred ITO electrode does work on TFT device. The study shows an easy and versatile method for deposition of ITO as top electrode on organic substrates.
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