Annealing treatment on Ga-doped zinc oxide films prepared by LPCVD method at temperature lower than 200℃
碩士 === 國立臺灣科技大學 === 化學工程系 === 104 === The aim of this study is to explore a suitable LPCVD reaction system that can form gallium doped zinc oxide (GZO) film as an alternative to indium tin oxide (ITO) functioned as the transparent conductive layer for blue light LEDS. To have GZO films that can diff...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62049041443387314624 |