The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor
碩士 === 國立臺灣科技大學 === 化學工程系 === 104 === The photo curing is an important process in polymer industrial, including the preparation of organic thin film transistor (OTFT). In this study, the effects of solvent content and light intensity on degree of photo curing for dielectric layer of OTFT are investi...
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ndltd-TW-104NTUS53420052017-11-12T04:38:35Z http://ndltd.ncl.edu.tw/handle/40741040954048604066 The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor 有機薄膜電晶體中介電層的溶劑量對光固化效應之影響 Pei-Wen Chen 陳沛汶 碩士 國立臺灣科技大學 化學工程系 104 The photo curing is an important process in polymer industrial, including the preparation of organic thin film transistor (OTFT). In this study, the effects of solvent content and light intensity on degree of photo curing for dielectric layer of OTFT are investigated in detail. The formulation of dielectric layer, D3000C-1-2, is provided by Taiwan Polyera Corporation for academic study. In this work, the polymer film was prepared via spin coating step. An electronic balance was applied to monitor the weight loss of wet polymer film during the dry period. The vapor composition of formulation was analyzed by gas chromatography equipped with mass spectrometer (GC-MS). The solidification and crosslink reaction of polymer will be initiated under illumination. The functional groups of polymer film were identified with using Fourier transform infrared spectrometer (FTIR) in different preparation conditions. The result indicates that the solvent evaporation rate is rapid in the beginning, then it will gradually slow down. The major vaporized substance in formulation is propylene glycol monomethyl ether acetate (PGMEA). The molecular structure of polymer film in the directly irradiated region is not affected by the amount of solvent in formulation due to the application of large illumination energy. However, the photo curing area on the indirectly irradiated region is increased with the decrease of solvent content, resulting from the effect of light reflection and scattering from the substrate surface. The amount of PGMEA is the key factor in photo-curing reaction. The spread of curing area can be suppressed effectively the scattering and reflection light are eliminated, and the resolution of pattern on the film will be improved. Yao-Hsuan Tseng 曾堯宣 2016 學位論文 ; thesis 77 zh-TW |
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碩士 === 國立臺灣科技大學 === 化學工程系 === 104 === The photo curing is an important process in polymer industrial, including the preparation of organic thin film transistor (OTFT). In this study, the effects of solvent content and light intensity on degree of photo curing for dielectric layer of OTFT are investigated in detail. The formulation of dielectric layer, D3000C-1-2, is provided by Taiwan Polyera Corporation for academic study.
In this work, the polymer film was prepared via spin coating step. An electronic balance was applied to monitor the weight loss of wet polymer film during the dry period. The vapor composition of formulation was analyzed by gas chromatography equipped with mass spectrometer (GC-MS). The solidification and crosslink reaction of polymer will be initiated under illumination. The functional groups of polymer film were identified with using Fourier transform infrared spectrometer (FTIR) in different preparation conditions.
The result indicates that the solvent evaporation rate is rapid in the beginning, then it will gradually slow down. The major vaporized substance in formulation is propylene glycol monomethyl ether acetate (PGMEA). The molecular structure of polymer film in the directly irradiated region is not affected by the amount of solvent in formulation due to the application of large illumination energy. However, the photo curing area on the indirectly irradiated region is increased with the decrease of solvent content, resulting from the effect of light reflection and scattering from the substrate surface.
The amount of PGMEA is the key factor in photo-curing reaction. The spread of curing area can be suppressed effectively the scattering and reflection light are eliminated, and the resolution of pattern on the film will be improved.
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author2 |
Yao-Hsuan Tseng |
author_facet |
Yao-Hsuan Tseng Pei-Wen Chen 陳沛汶 |
author |
Pei-Wen Chen 陳沛汶 |
spellingShingle |
Pei-Wen Chen 陳沛汶 The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
author_sort |
Pei-Wen Chen |
title |
The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
title_short |
The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
title_full |
The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
title_fullStr |
The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
title_full_unstemmed |
The Effects of Solvent Content on Degree of Photo Curing for Dielectric Layer of Organic Thin Film Transistor |
title_sort |
effects of solvent content on degree of photo curing for dielectric layer of organic thin film transistor |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/40741040954048604066 |
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