An investigation of the thermal boundary resistance of the Si-Ge alloy interfaces in use of molecular dynamics simulations
碩士 === 國立臺灣大學 === 機械工程學研究所 === 104 === In recent years, studies show materials embedded with high-density interfaces are potential candidates for thermoelectric devices due to their low thermal conductivities and acceptable power factors. Yet, the detailed mechanism of the phonon transmission throug...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21694774222261433707 |