Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process
碩士 === 國立臺灣大學 === 電信工程學研究所 === 104 === The demand for more compact, smaller size and longer using time transmitter in wireless communication system has increased according to the rapidly development of communication technique and high date-rate transmission. The power amplifiers (PA), which requires...
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ndltd-TW-104NTU054350262017-05-20T04:30:08Z http://ndltd.ncl.edu.tw/handle/11048735395350296035 Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process 使用互補式金氧半導體與整合被動元件製程之K頻段自動調整偏壓功率放大器及主動天線整合電路研究 Ying-Chia Chen 陳瑩嘉 碩士 國立臺灣大學 電信工程學研究所 104 The demand for more compact, smaller size and longer using time transmitter in wireless communication system has increased according to the rapidly development of communication technique and high date-rate transmission. The power amplifiers (PA), which requires high gain, high output power and high efficiency, plays a necessary role in the communication system. Due to that power amplifier consumes the most dc power in the transmitter, the optimization of the efficiency becomes a key issue. Several new structures of power amplifier are proposed recently in order to achieve good linearity and efficiency. In this thesis, two circuits are designed and realized. The first is a differential power amplifier using adaptive-bias technique, and the second one is an active antenna integrated with adaptive-bias power amplifier. The former is realized by 0.18-μm CMOS technology while the latter is implemented on CMOS and IPD technology. The operation frequency is 24 GHz. The K-band differential power amplifier which adapts an adaptive-bias technique to increase the efficiency of the power amplifier is described in the first part. This power amplifier is fabricated in 0.18-µm CMOS technology. According to the measurement, the designed PA consumes 104 mW at quiescent state. The power-added-efficiency at OP1dB is 3.9% while maintaining 6.5-dB small-signal gain, 10-dBm OP1dB and 10.5-dBm Psat. In the second part, a K-band active antenna integrated with CMOS adaptive-bias PA is proposed to improve the efficiency of the PA. This circuit includes a CMOS adaptive-bias PA and a dipole antenna; the power amplifier is realized by 0.18-µm CMOS technology and the antenna is implemented on IPD technology. The active antenna integrated with power amplifier adapts the adaptive-bias technique to improve the power amplifier efficiency under back-off operation. Besides, the input impedance of the antenna is designed to be the optimal load of the PA in order to eliminate the loss caused by output matching network, and the efficiency is improved as a consequence. The measurement results of PA shows that the peak PAE is 26.7% and PAE is 24.1% at 19-dBm OP1dB at 24GHz. The measurement results show that the efficiency of the PA is significantly improved. Kun-You Lin 林坤佑 2015 學位論文 ; thesis 129 en_US |
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碩士 === 國立臺灣大學 === 電信工程學研究所 === 104 === The demand for more compact, smaller size and longer using time transmitter in wireless communication system has increased according to the rapidly development of communication technique and high date-rate transmission. The power amplifiers (PA), which requires high gain, high output power and high efficiency, plays a necessary role in the communication system. Due to that power amplifier consumes the most dc power in the transmitter, the optimization of the efficiency becomes a key issue. Several new structures of power amplifier are proposed recently in order to achieve good linearity and efficiency.
In this thesis, two circuits are designed and realized. The first is a differential power amplifier using adaptive-bias technique, and the second one is an active antenna integrated with adaptive-bias power amplifier. The former is realized by 0.18-μm CMOS technology while the latter is implemented on CMOS and IPD technology. The operation frequency is 24 GHz.
The K-band differential power amplifier which adapts an adaptive-bias technique to increase the efficiency of the power amplifier is described in the first part. This power amplifier is fabricated in 0.18-µm CMOS technology. According to the measurement, the designed PA consumes 104 mW at quiescent state. The power-added-efficiency at OP1dB is 3.9% while maintaining 6.5-dB small-signal gain, 10-dBm OP1dB and 10.5-dBm Psat.
In the second part, a K-band active antenna integrated with CMOS adaptive-bias PA is proposed to improve the efficiency of the PA. This circuit includes a CMOS adaptive-bias PA and a dipole antenna; the power amplifier is realized by 0.18-µm CMOS technology and the antenna is implemented on IPD technology. The active antenna integrated with power amplifier adapts the adaptive-bias technique to improve the power amplifier efficiency under back-off operation. Besides, the input impedance of the antenna is designed to be the optimal load of the PA in order to eliminate the loss caused by output matching network, and the efficiency is improved as a consequence. The measurement results of PA shows that the peak PAE is 26.7% and PAE is 24.1% at 19-dBm OP1dB at 24GHz. The measurement results show that the efficiency of the PA is significantly improved.
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author2 |
Kun-You Lin |
author_facet |
Kun-You Lin Ying-Chia Chen 陳瑩嘉 |
author |
Ying-Chia Chen 陳瑩嘉 |
spellingShingle |
Ying-Chia Chen 陳瑩嘉 Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
author_sort |
Ying-Chia Chen |
title |
Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
title_short |
Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
title_full |
Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
title_fullStr |
Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
title_full_unstemmed |
Research on K-band Active Antenna Integrated with Adaptive-bias Power Amplifier Using CMOS and IPD Process |
title_sort |
research on k-band active antenna integrated with adaptive-bias power amplifier using cmos and ipd process |
publishDate |
2015 |
url |
http://ndltd.ncl.edu.tw/handle/11048735395350296035 |
work_keys_str_mv |
AT yingchiachen researchonkbandactiveantennaintegratedwithadaptivebiaspoweramplifierusingcmosandipdprocess AT chényíngjiā researchonkbandactiveantennaintegratedwithadaptivebiaspoweramplifierusingcmosandipdprocess AT yingchiachen shǐyònghùbǔshìjīnyǎngbàndǎotǐyǔzhěnghébèidòngyuánjiànzhìchéngzhīkpínduànzìdòngdiàozhěngpiānyāgōnglǜfàngdàqìjízhǔdòngtiānxiànzhěnghédiànlùyánjiū AT chényíngjiā shǐyònghùbǔshìjīnyǎngbàndǎotǐyǔzhěnghébèidòngyuánjiànzhìchéngzhīkpínduànzìdòngdiàozhěngpiānyāgōnglǜfàngdàqìjízhǔdòngtiānxiànzhěnghédiànlùyánjiū |
_version_ |
1718449934638776320 |