| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === Extreme Ultraviolet Lithography (EUVL) is one of the most promising lithography technologies for next generation, but EUVL suffers from the flare effects (i.e., scattered light) which cause critical dimension (CD) distortion and damage CD uniformity. Moreover, Chemical Mechanical Polishing (CMP) is an important process which planarization silicon oxide, metal, and polysilicon surfaces in modern IC manufacturing. Both of the manufacturability issues are highly related to layout pattern distribution. However, there is a trade-off between the two techniques because the desirable pattern distributions for EUV flare and CMP optimization are different. To minimize EUV flare effects, a concave density distribution is preferred, where the center of a chip has the higher density than periphery regions. On the other hand, CMP optimization tends to keep the density distribution uniform. In addition to control layout pattern distribution, routing is a critical stage in VLSI design flow because the wire density would significantly affect metal distribution. In this thesis, we propose the first work of EUV flare- and CMP-aware routing that considers the two manufacturability issues. Besides, we use the flare map which is calculated by previous placement result. According to this flare map to choose appropriate Steiner tree. In the other hand, every time we finish one net routing, we need to update flare map. We propose an efficient way to quickly update flare map and reduce distortion. The experimental results show that our proposed algorithms can effectively and efficiently achieve the routing solutions with optimized EUV flare effects, the CMP cost.
|
|---|
