Analysis of Hydrogen plasma clean before deposition of HfO2 on InAs by Oxide MBE system with deflector interface
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === In this thesis, we use Oxide MBE system to deposit oxide layers (HfO2) on InAs substrates to fabricate the Metal-oxide-semiconductor capacitor (MOSCAP). Hafnium dioxide was grown by hafnium metal source with oxygen plasma. Before depositing high κ dielectric la...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26956700979302276021 |