TCAD Simulation of n-type InAs MOSCAPs with High-κ Dielectric Layer

• Main Authors: Chen-Lun Ting, 丁振倫
• Other Authors: Hao-Hsiung Lin
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/05869089824150859878

碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === In the thesis, the characteristics of the Metal-Oxide-Semiconductor capacitor (MOSCAP), fabricated by III-V semiconductors and high-κ materials, are investigated. The III-V semiconductor we choose is InAs. Because of its small electron effective mass, InAs is allowed to have high electron mobility. However, the property also comes with the small conduction band density of state (DOS). It gives rise to the difference in the device performances, compared with Si-based MOSCAP. Therefore, we use Technology Computer Aided Design (TCAD) to investigate the properties of the ideal MOSCAPs, fabricated by III-V semiconductors and high-κ materials. Additionally, the quality of high-κ material/III-V semiconductor interface is essential because it causes critical effects on the device’s performances. Consequently, how to extract the correct interface trap density (Dit) is crucial. The orthodox approaches to extract interface trap density in Si/SiO2 interface, including the conductance method and the capacitance method, encounter some limitations. As a result, the ideal capacitance-voltage data simulated by TCAD, is fitted with our experimental low frequency capacitance-voltage data, by considering the effect of interface trap density. Through the specific method, we can get the information of interface trap density thoroughly.