Fabrication and Development of AlGaN/GaN Heterojunction Fin Structure High Electron Mobility Transistors and Large Area High Current PowerTransistors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === In this thesis, we focus on developing enhancement-mode operation devices. Instead of using conventional fluorine plasma treatment underneath the gate or growing p-type GaN or p-type AlGaN over the AlGaN barrier, we use fin structures, hoping to make threshold...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/87821458228509786504 |