Growth and Analysis of Semiconductor Heterojunction Nanowires
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 104 === Formation of abrupt and defect-free Si/Ge heterostructures is of great importance for device applications. One of the advantages of this structure is that the lattice strain due to the 4.18% lattice mismatch between Si and Ge may be helpful to improve the op...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06466693391277673854 |