Raman Scattering and Structure Properties in InPSb Alloys

碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === We grew a series of InP1-xSbx on (0 0 1) InAs substrate by gas-source molecular beam epitaxy, and reported on the structural properties of ternaries with two Sb composition, x = 0.17 and x = 0.36. Results from high resolution x-ray diffraction (XRD) and recipro...

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Main Authors: Chieh-Miao Chang, 張傑淼
Other Authors: Hao-Hsiung Lin
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/99763887956493342021
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spelling ndltd-TW-104NTU051241312017-06-25T04:38:16Z http://ndltd.ncl.edu.tw/handle/99763887956493342021 Raman Scattering and Structure Properties in InPSb Alloys 銻磷化銦結構特性與拉曼光譜之研究 Chieh-Miao Chang 張傑淼 碩士 國立臺灣大學 光電工程學研究所 104 We grew a series of InP1-xSbx on (0 0 1) InAs substrate by gas-source molecular beam epitaxy, and reported on the structural properties of ternaries with two Sb composition, x = 0.17 and x = 0.36. Results from high resolution x-ray diffraction (XRD) and reciprocal space mapping (RSM) show that the sample with x = 0.17 suffers from phase separation while the sample with x = 0.36 is of good crystallinity and coherently strained to the substrate. For the latter sample, the InP bond length obtained from extended X-ray absorption fine structure (EXAFS) coincides with the value from valence force field (VFF) calculation, and the mean atomic deviation from the zincblende lattice is zero. We have shown that because of the zero mean, the XRD and RSM are not affected by the internal distortion. For the sample with x =0.17, the InP bond length obtained from EXAFS is much shorter than the value calculated by VFF model, suggesting the loss of long range order, i. e., the mean of atomic deviation is not zero, in other words, the zincblende lattice from which the atoms deviate no longer exists and the long range order is lost. We believe that the bond distortion in this sample has been partially released through defect generation. Raman scattering also supports these findings. The sample with x = 0.17 shows distinct InP-like and InSb-like modes. While the InP-like modes of the sample with x = 0.36 merge to a wide band, which is attributed to a one-bond-multi-mode behavior induced by the internal distortion. Polar plot with the analyzer aligned to [1 0 0] was used to quantify the effect of distortion on the modes. The three modes for the sample with x = 0.36 show different behaviors. The influence of internal distortion decreasing with the decreasing bending distortion. The strong bending distortion hinders the bond to obey the normal vibration. In the sample with x = 0.17, the three modes are all dominated by asymmetry vibration, suggesting that they are activated by defect vibration. Due to the complexity of these modes, we label the high frequency peak as InP-like I while InP-like II accounts for the low frequency end in the final. Hao-Hsiung Lin Zhe-Chun Feng 林浩雄 馮哲川 2016 學位論文 ; thesis 63 en_US
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description 碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === We grew a series of InP1-xSbx on (0 0 1) InAs substrate by gas-source molecular beam epitaxy, and reported on the structural properties of ternaries with two Sb composition, x = 0.17 and x = 0.36. Results from high resolution x-ray diffraction (XRD) and reciprocal space mapping (RSM) show that the sample with x = 0.17 suffers from phase separation while the sample with x = 0.36 is of good crystallinity and coherently strained to the substrate. For the latter sample, the InP bond length obtained from extended X-ray absorption fine structure (EXAFS) coincides with the value from valence force field (VFF) calculation, and the mean atomic deviation from the zincblende lattice is zero. We have shown that because of the zero mean, the XRD and RSM are not affected by the internal distortion. For the sample with x =0.17, the InP bond length obtained from EXAFS is much shorter than the value calculated by VFF model, suggesting the loss of long range order, i. e., the mean of atomic deviation is not zero, in other words, the zincblende lattice from which the atoms deviate no longer exists and the long range order is lost. We believe that the bond distortion in this sample has been partially released through defect generation. Raman scattering also supports these findings. The sample with x = 0.17 shows distinct InP-like and InSb-like modes. While the InP-like modes of the sample with x = 0.36 merge to a wide band, which is attributed to a one-bond-multi-mode behavior induced by the internal distortion. Polar plot with the analyzer aligned to [1 0 0] was used to quantify the effect of distortion on the modes. The three modes for the sample with x = 0.36 show different behaviors. The influence of internal distortion decreasing with the decreasing bending distortion. The strong bending distortion hinders the bond to obey the normal vibration. In the sample with x = 0.17, the three modes are all dominated by asymmetry vibration, suggesting that they are activated by defect vibration. Due to the complexity of these modes, we label the high frequency peak as InP-like I while InP-like II accounts for the low frequency end in the final.
author2 Hao-Hsiung Lin
author_facet Hao-Hsiung Lin
Chieh-Miao Chang
張傑淼
author Chieh-Miao Chang
張傑淼
spellingShingle Chieh-Miao Chang
張傑淼
Raman Scattering and Structure Properties in InPSb Alloys
author_sort Chieh-Miao Chang
title Raman Scattering and Structure Properties in InPSb Alloys
title_short Raman Scattering and Structure Properties in InPSb Alloys
title_full Raman Scattering and Structure Properties in InPSb Alloys
title_fullStr Raman Scattering and Structure Properties in InPSb Alloys
title_full_unstemmed Raman Scattering and Structure Properties in InPSb Alloys
title_sort raman scattering and structure properties in inpsb alloys
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/99763887956493342021
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