Investigation of temperature dependent efficiency droop for light-emitting diodes on patterned-sapphire substrates with various depths
碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === GaN-based Light-Emitting Diodes (LEDs) are typically grown on c-plane sapphire, or even patterned sapphire substrates (PSSs). In the same Epitaxy conduction, we designed three different depth Patterned Sapphire Substrates (2.55um, 2.65um, 2.75um). All of them a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43321661490404255628 |