Investigation of temperature dependent efficiency droop for light-emitting diodes on patterned-sapphire substrates with various depths

• Main Authors: Tze-Hung Ju, 朱澤宏
• Other Authors: 管傑雄
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/43321661490404255628

碩士 === 國立臺灣大學 === 光電工程學研究所 === 104 === GaN-based Light-Emitting Diodes (LEDs) are typically grown on c-plane sapphire, or even patterned sapphire substrates (PSSs). In the same Epitaxy conduction, we designed three different depth Patterned Sapphire Substrates (2.55um, 2.65um, 2.75um). All of them are period of 3um and hexagonal arranged. We use Electroluminescence Measurement System with temperature controller to measure them from 5 ° C to 80 ° C and discuss their T-droop (The efficiency droop caused by increasing temperature) , and temperature tolerant. Moreover, we use the 266nm laser to do the Photoluminescence Measurement. After that, the sequence of the Epitaxy quality of them has been found. Consistent with the result measured by Electroluminescence Measurement System. It proves that LED with a better Epitaxy quality has a high temperature-tolerant.