Studies of Position-Sensitive Detector and Power Diodes

• Main Authors: Wu,Jian-Yi, 吳建毅
• Other Authors: Lour,Wen-Shiung
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/6gkn98

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 104 === Abstract The purpose of this thesis is to study two devices of automobile electronics-Position-Sensitive Detector and Power Diodes. The need of global automobile market has been customization and diversification. Instead of traditional automobile industry, people want to have a car with safety, environmental friendly and comfort .By integrating microcontroller unit( MCU),power devises and image sensors, automobile electronics provides people products with low energy consumption, safety, and comfort. Starting with design of SBD structures and theoretical analyses with consideration-dependent critical field and mobility to determine electric properties such as breakdown voltage, turn-on voltage, potential barrier height, and turn-on resistance as a function of concentration and/or thickness of the drift layer.SBD devices were then fabricated using Ohmic process and CTLM measurement, RIE etch and -step、deposition of Schottky metal and high-voltage measurement etc. GaAs p-i-n junction is illuminated by different light source. Lateral photovoltaic voltage is measured as a function of light position. Sensitivity, linearity and respond time are discussed as key performance parameters of position-sensitive detector. Key words: Schottky metal, drift layer, critical field, respond time and sensitivity