| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === In this study, Hf-doped ZnO films were prepared by sol-gel method on silicon substrate and glass. The effect of the HZO films properties on Hf doping ratios and annealing temperature was discussed. We use X-ay diffraction (XRD) and scanning electronic microscopy (SEM) to investigate the crystallization morphology and surface morphology, ultraviolet-visable spectroscopy (UV/VIS) to measure the transparency and energy gap, X-ray photoelectron spectroscopy (XPS) to analyze the surface element constitution, Photoluminescence (PL) to measure the optical property, semiconductor parameter to analyze the characteristic of the HZO thin film transistors. From XRD result, HZO films are wurtzite structure and the predominant diffraction peak correspond to the (002) orientation. The surface of HZO films is smooth and dense at higher annealing temperature, and the thickness of HZO film is about 20 nm. All HZO films with different annealing temperature have high transparency(>85%). The XPS and PL results show that doping Hf can reduce oxygen vacancy. The thin film transistor fabricated by HZO thin films doesn’t work as we expect.Only the TFT annealed at 500℃ with doping 10% Hf concentration shows the output characteristic curve.We assume that not only thickness of films is too thin but also uneven, and the solution being polluted during the experiment may cause these result.
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