Preparation of Sliver Nanowire Films and their Flexible Device Applications
碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === Sliver nanowire films have been studied to have 90% of transmittance and 49Ω/sq of sheet resistance, close to the commonly used ITO films. Silver has the best electrical conductivity and thermal conductivity in metals; moreover, silver nanowire films have good...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/76eknn |
id |
ndltd-TW-104NTNT0159013 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-104NTNT01590132019-05-30T03:50:24Z http://ndltd.ncl.edu.tw/handle/76eknn Preparation of Sliver Nanowire Films and their Flexible Device Applications 奈米銀線薄膜及其應用於軟性元件之研究 HSIEH,HSIANG-HSIU 謝湘秀 碩士 國立臺南大學 材料科學系碩士班 104 Sliver nanowire films have been studied to have 90% of transmittance and 49Ω/sq of sheet resistance, close to the commonly used ITO films. Silver has the best electrical conductivity and thermal conductivity in metals; moreover, silver nanowire films have good mechanical strength and are stretchable. That is why the silver nanowire films can replace the rigid ITO to be applied as the stretchable transparent conductive films in functional devices. In the synthsis of silver nanwires, we use a modified polyol-solvothermal process, where the seed precursor is FeCl3. We change the different parameters and obtain the best silver nanowires with a dimension of 50~90μm in length and 120nm of average diameter. In the synthsis of silver nanowires, the PVP will remain on the surface of silver nanowire, leading to the large contact resistance between wires. Moreover the silver nanowires simply stack together, leading to the poor adhesion between wires and substrate. In order to improve these shortcomings of silver nanowire films, we obtain the 88.2% of transmittance and 21.4Ω/sq of the sheet resistance by using the low temperature plasma to remove the PVP on the surface of silver nanowires and to sinter the silver nanowires. Then we electroplate Cu2O on the silver nanowires film, leading to a closer contact between wires and forming the protective layers. The Cu2O/silver nanowires film has the 71.0% of transmittance and 19.3Ω/sq of the sheet resistance. Finally, we transfer the silver nanowire film to the PMMA, and obtain the composite films with 80.2% of transmittance, 17.2% of the haze and 4.8Ω/sq of sheet resistance. For the applications, we use the silver nanowire films to be the transparent conductive heater and the transparent stretchable film. In the heater, the heating curve of the Cu2O/silver nanowire film is stable as compared with the silver nanowire films, obtaining 60.5℃ temperature increase for the application of 9V. Using the silver nanowire/PU film to be the heater, we can obtain a 72℃ temperature increase for 2.5V. Finally, we use the silver nanwire/PU film as stretchable strain sensors, and observe the 10- and 15-fold resistance change at the 40% and 50% strain, respectively. Demonstrating to their potential in future applications. LEU ING-CHI 呂英治 2016 學位論文 ; thesis 72 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === Sliver nanowire films have been studied to have 90% of transmittance and 49Ω/sq of sheet resistance, close to the commonly used ITO films. Silver has the best electrical conductivity and thermal conductivity in metals; moreover, silver nanowire films have good mechanical strength and are stretchable. That is why the silver nanowire films can replace the rigid ITO to be applied as the stretchable transparent conductive films in functional devices.
In the synthsis of silver nanwires, we use a modified polyol-solvothermal process, where the seed precursor is FeCl3. We change the different parameters and obtain the best silver nanowires with a dimension of 50~90μm in length and 120nm of average diameter. In the synthsis of silver nanowires, the PVP will remain on the surface of silver nanowire, leading to the large contact resistance between wires. Moreover the silver nanowires simply stack together, leading to the poor adhesion between wires and substrate. In order to improve these shortcomings of silver nanowire films, we obtain the 88.2% of transmittance and 21.4Ω/sq of the sheet resistance by using the low temperature plasma to remove the PVP on the surface of silver nanowires and to sinter the silver nanowires. Then we electroplate Cu2O on the silver nanowires film, leading to a closer contact between wires and forming the protective layers. The Cu2O/silver nanowires film has the 71.0% of transmittance and 19.3Ω/sq of the sheet resistance. Finally, we transfer the silver nanowire film to the PMMA, and obtain the composite films with 80.2% of transmittance, 17.2% of the haze and 4.8Ω/sq of sheet resistance.
For the applications, we use the silver nanowire films to be the transparent conductive heater and the transparent stretchable film. In the heater, the heating curve of the Cu2O/silver nanowire film is stable as compared with the silver nanowire films, obtaining 60.5℃ temperature increase for the application of 9V. Using the silver nanowire/PU film to be the heater, we can obtain a 72℃ temperature increase for 2.5V. Finally, we use the silver nanwire/PU film as stretchable strain sensors, and observe the 10- and 15-fold resistance change at the 40% and 50% strain, respectively. Demonstrating to their potential in future applications.
|
author2 |
LEU ING-CHI |
author_facet |
LEU ING-CHI HSIEH,HSIANG-HSIU 謝湘秀 |
author |
HSIEH,HSIANG-HSIU 謝湘秀 |
spellingShingle |
HSIEH,HSIANG-HSIU 謝湘秀 Preparation of Sliver Nanowire Films and their Flexible Device Applications |
author_sort |
HSIEH,HSIANG-HSIU |
title |
Preparation of Sliver Nanowire Films and their Flexible Device Applications |
title_short |
Preparation of Sliver Nanowire Films and their Flexible Device Applications |
title_full |
Preparation of Sliver Nanowire Films and their Flexible Device Applications |
title_fullStr |
Preparation of Sliver Nanowire Films and their Flexible Device Applications |
title_full_unstemmed |
Preparation of Sliver Nanowire Films and their Flexible Device Applications |
title_sort |
preparation of sliver nanowire films and their flexible device applications |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/76eknn |
work_keys_str_mv |
AT hsiehhsianghsiu preparationofslivernanowirefilmsandtheirflexibledeviceapplications AT xièxiāngxiù preparationofslivernanowirefilmsandtheirflexibledeviceapplications AT hsiehhsianghsiu nàimǐyínxiànbáomójíqíyīngyòngyúruǎnxìngyuánjiànzhīyánjiū AT xièxiāngxiù nàimǐyínxiànbáomójíqíyīngyòngyúruǎnxìngyuánjiànzhīyánjiū |
_version_ |
1719194528283361280 |