Effect of Ultraviolet Light Irradiation and Annealing Atmosphere on the Characteristics of Solution-Processed Niobium Zinc Tin Oxide Thin Film Transistor
碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === In this study, we used a solution process to fabricate Nb-Zn-Sn-O (NZTO) films as channel layers for thin film transistors. The mole ratio of metal atoms of the precursor is Nb: Zn: Sn = 0.03: 1: 0.97. We hope to study the influence of use ultraviolet light i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2k2ej9 |