| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === In this study, we used a solution process to fabricate Nb-Zn-Sn-O (NZTO) films as channel layers for thin film transistors. The mole ratio of metal atoms of the precursor is Nb: Zn: Sn = 0.03: 1: 0.97. We hope to study the influence of use ultraviolet light irradiation on the characteristics of NZTO thin film transistors. The experimental results indicate an improvement of device performance is observed by the NZTO channel layers with Uv-Ozone source (6%185nm+94%254nm) and UV source (254nm) irradiation. In addition, an Ultraviolet-visible absorption spectrum present a strong absorption at wavelengths less than 300 nm, implying that the UV-Ozone source (6% 185nm + 94% 254nm) and UV source (254 nm) can be effectively absorbed by the NZTO precursor. In the results of Secondary Ion Mass Spectrometry (SIMS) depth profile, the signal of the metal elements ( Nb、Zn、Sn) in NZNO films with ultraviolet irradiation treatment is stronger that in NZNO films without ultraviolet irradiation treatment, which is related to the promotion of hydrolysis condensation reaction of precursor solution after UV irradiation treatment. In this study, we also investigate the influence of annealing temperature, irradiation time, and annealing atmosphere on the material properties of NZTO and electrical properties of the NZTO thin film transistors.
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