Study of ethanolamine on the characteristics of solution processed NbZnSn oxide TFT
碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === A thin film transistor is a type of field effect transistor. In this study, we fabricated the channel layer of TFT by using sol-gel method. Sol-gel method has some advantages such as simple coating process, low equipment costs , high chemical homogeneity, low p...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wjey94 |
| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 104 === A thin film transistor is a type of field effect transistor. In this study, we fabricated the channel layer of TFT by using sol-gel method. Sol-gel method has some advantages such as simple coating process, low equipment costs , high chemical homogeneity, low process temperature.Niobium zinc tin oxides (NZTO) were firstly used as the channel layers in this study. To study the variation of electrical characteristics of the TFT, the ethanolamine was directly added to the NZTO precursor. The binding environments of elements and material characteristics of NZTO films with and without adding ethanolamine are studied. TFT electrical measurements are also studied to understand the effect of ethanolamine. Furthermore, in this study we also investigated the effect of the aging time of precursor solution on the electrical characteristics of the TFT. Finally, we studied the influence of the different types of ethanolamine on the electrical characteristics of the TFT to clarify the effects.
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