Fabrication of High Power Schottky Barrier Diode with Field Plate Design

• Main Authors: Cai, Yi Min, 蔡宜珉
• Other Authors: Wu, Meng Chyi
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/97131138596251460131

碩士 === 國立清華大學 === 電子工程研究所 === 104 === Gallium nitride is a wide bandgap material which have high critical electric field characteristics could withstand higher bias. In addition, two-dimensional electron gas with high transmission speed characteristics can be applied on high-speed device. Therefore, gallium nitride high power devices have rapid development in recent years. The main objective of this study is to fabricate planar schottky barrier diode on GaN wafer. By improving the process flow to fabricate the schottky barrier diodes with stable electrical characteristics. Explore electrical characteristics by designing elements graphic which have different spacing between the anode and the cathode. In this study, we optimize ohmic contact to reduce specific contact resistance. Measure buffer layer leakage current to understand the quality of the epi-wafer. Finally, we fabricate a lateral schottky barrier diode with field plate design could increase the breakdown voltage of diode. The breakdown voltage of schottky barrier diode is 1100V, on resistance is 3.55 mΩ-cm2, and BFOM is 340.9 MW/cm2.