A study on High-Speed Grinding of Silicon Carbide
碩士 === 國立清華大學 === 動力機械工程學系 === 104 === In recent year, the manufacturer of electronic devices has confirmed that Wide Bandgap materials such as Silicon Carbide can bring many advantages to the development of Power Semiconductor Devices. However, Silicon Carbide with the high hardness and strength ar...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70767181000226272991 |