A study on High-Speed Grinding of Silicon Carbide

• Main Authors: Lin, Li Yi, 林澧亦
• Other Authors: Tso, Pei Lum
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/70767181000226272991

碩士 === 國立清華大學 === 動力機械工程學系 === 104 === In recent year, the manufacturer of electronic devices has confirmed that Wide Bandgap materials such as Silicon Carbide can bring many advantages to the development of Power Semiconductor Devices. However, Silicon Carbide with the high hardness and strength are difficult-to-cut materials in the machining process. By analyzing the high speed grinding abrasive trajectory, we investigate the difference between high speed grinding and conventional grinding. We also established the model of chip formation on high speed grinding and find the reason why high speed grinding is suitable for processing silicon carbide. Finally, these experiments verify the chip formation proposed, also the result shows that high speed grinding with various experiment parameters and processing conditions can enhance the grinding efficiency as well as improve the surface integrity.