Development of Cr1-x-Six-based high resistivity thin-film resistors

• Main Authors: Chi-lun Li, 李季倫
• Other Authors: Ying-chung Chen
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/95809533762192377475

碩士 === 國立中山大學 === 電機工程學系研究所 === 104 === In this study, high resistivity thin-film resistors using Cr1-x-Six-based materials were fabricated. To fabricate high resistivity thin-film resistors, the RF magnetron sputtering method for the growth of Cr1-x-Six thin films onto Al2O3 was adopted and the influences of the sputtering parameters on the physical and electrical properties were investigated. The surface images of the amorphous structured thin films were observed by scanning electron microscopy (SEM). The Cr-Si atomic ratio of Cr1-x-Six thin films were measured by energy dispersive spectrometer (EDS), the results showed that sputtering parameters did not obviously affect the Cr-Si atomic ratio. In Cr-Si thin films, it showed that as Si content increased the resistivity was rised. After deposition, the thin-film resistors were annealed at 450℃ under atmosphere using the rapid thermal annealing (RTA) process. It could be found that the annealing process had apparent effects on the resistivity and temperature coefficient of resistance. After annealing, the thin film of 28wt%Cr-72wt%Si existed a larger sheet resistance (6833.9 Ω/sq.) and resistivity (68489 µΩ∙cm), on the other hand, the thin film of 55wt%Cr-45wt%Si had a lower temperature coefficient of resistance (49.4ppm/℃).