Impacts of Oxygen Plasma Induced Interfacial Layer on P-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack
碩士 === 國立中山大學 === 電機工程學系研究所 === 104 === With the development of integrated circuits, the transistors dimension has been scaling. In order to maintain the electrical behavior of transistors, miniature engineering faced many challenges. For example, reduced of gate control ability and increased of sub...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98877031270239718359 |