Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 104 === In this research, ZnO nano-material grows on sapphire substrate by chemical vapor deposition and Vapor-Liquid-Solid (VLS) growth mechanism. Argon and oxygen are used as carrier gas and reaction gas respectively. Mixed powder of ZnO and graphite are used as...

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Main Authors: Wan-li Shih, 石萬里
Other Authors: Ming-Chi Chou
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/81538102810568520643
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spelling ndltd-TW-104NSYS51590072017-07-30T04:41:11Z http://ndltd.ncl.edu.tw/handle/81538102810568520643 Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition 以化學汽相沉積法生長氧化鋅奈米材料在(0001)/ (1-102) 藍寶石基板 Wan-li Shih 石萬里 碩士 國立中山大學 材料與光電科學學系研究所 104 In this research, ZnO nano-material grows on sapphire substrate by chemical vapor deposition and Vapor-Liquid-Solid (VLS) growth mechanism. Argon and oxygen are used as carrier gas and reaction gas respectively. Mixed powder of ZnO and graphite are used as reaction sources. Catalyst(Sapphire substrates) is coated by Au. After the reaction, we use scanning electron microscope, x-ray diffractometer, transmission electron microscope, photoluminescence spectroscope, cathodoluminescent and Raman spectroscope to analyze the characteristics of ZnO nano-materials. In the experiment, Under certain condition (reaction temperature is 950℃; reaction time is 10 minutes ; mixed gas flow of argon and oxygen is 50 sccm), I found that (0001)Sapphire grows uniformly and regularly in the direction of [0002]. Under the condition (reaction temperature is 960℃; reaction time is 10 minutes ; mixed gas flow of argon and oxygen is 50 sccm), I found well-emitted nano combs of ZnO on the (11 ̅02)Sapphire. Ming-Chi Chou 周明奇 2016 學位論文 ; thesis 74 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 104 === In this research, ZnO nano-material grows on sapphire substrate by chemical vapor deposition and Vapor-Liquid-Solid (VLS) growth mechanism. Argon and oxygen are used as carrier gas and reaction gas respectively. Mixed powder of ZnO and graphite are used as reaction sources. Catalyst(Sapphire substrates) is coated by Au. After the reaction, we use scanning electron microscope, x-ray diffractometer, transmission electron microscope, photoluminescence spectroscope, cathodoluminescent and Raman spectroscope to analyze the characteristics of ZnO nano-materials. In the experiment, Under certain condition (reaction temperature is 950℃; reaction time is 10 minutes ; mixed gas flow of argon and oxygen is 50 sccm), I found that (0001)Sapphire grows uniformly and regularly in the direction of [0002]. Under the condition (reaction temperature is 960℃; reaction time is 10 minutes ; mixed gas flow of argon and oxygen is 50 sccm), I found well-emitted nano combs of ZnO on the (11 ̅02)Sapphire.
author2 Ming-Chi Chou
author_facet Ming-Chi Chou
Wan-li Shih
石萬里
author Wan-li Shih
石萬里
spellingShingle Wan-li Shih
石萬里
Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
author_sort Wan-li Shih
title Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
title_short Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
title_full Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
title_fullStr Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
title_full_unstemmed Epitaxial Growth of Zinc Oxide Nanomaterials on (0001)/(1-102) Sapphire Substrate by Chemical Vapor Deposition
title_sort epitaxial growth of zinc oxide nanomaterials on (0001)/(1-102) sapphire substrate by chemical vapor deposition
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/81538102810568520643
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