Synthesis of CNT on graphene

• Main Authors: Li-sheng Pan, 潘立笙
• Other Authors: Hsiu-Wei Chen
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/56159352377366366854

碩士 === 國立中山大學 === 化學系研究所 === 104 === Based on Cu foil, using LPCVD method with different temperature, reaction time, and CH4/H2 ratio to synthesize single, double, or few layers graphene. Then using Cu to catalyze CNT on graphene. This research uses different temperature, time, reaction gas ratio(CH4/H2), and concentration of metal to control the characteristic of G-CNT. Besides, using Raman spectroscopy, SEM, and TEM to discuss the influence of different reaction factors to the growth of G-CNT. Results indicated that when reaction temperature at 1000 oC, CH4/H2 ratio equals 5:1, and reacting for 25 minutes can produce the best quality of few layers graphene. Using Cu metal catalyst to grow CNT on graphene directly, amounts and size of CNT along with carbon source and time increase would become more and bigger, but accompany with more defects. When reaction temperature become higher, size and amount of CNT would also increase, but defects reverse.