Study on Germanium Sulfide Layer in Conductive-Bridging Random Access Memory
碩士 === 國立高雄師範大學 === 化學系 === 104 === Previous research in our lab indicated that there is poorer reliability for the conductive-bridging random access memory (CBRAM) with metal-oxide switching layer and copper electrode than RRAM with inert electrode. Therefore, this study demonstrates the switching...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53972064205283232703 |