以CUDA平行運算設計SiO2/Cr/SiO2/Cr多層膜結構應用於廣色域且高效率太陽光熱選擇性吸收膜之模擬與製作

碩士 === 國立高雄第一科技大學 === 電機工程研究所碩士班 === 104 === Non-polluting and inexhaustible solar energy is available in amounts several orders of magnitude greater than that needed for all present world requirements. Therefore, it will be the most attractive and promising alternative energy source. It will be exp...

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Bibliographic Details
Main Authors: Yu-Jhih Su, 蘇煜智
Other Authors: Fu-der Lai
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/72793573192149977909
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Summary:碩士 === 國立高雄第一科技大學 === 電機工程研究所碩士班 === 104 === Non-polluting and inexhaustible solar energy is available in amounts several orders of magnitude greater than that needed for all present world requirements. Therefore, it will be the most attractive and promising alternative energy source. It will be expected that a film will have the following 6 dominant positions: (1) with a high thickness deviation tolerance of more than 20% for each layer developed, (2) with wide color gamut including orange, yellow, green, blue, purple, etc.,(3) with thickness of less than 200nm for easily commercial manufacture and low production cost,(4) with excellent photo-thermal conversion efficiency of more than 85%. The high-precision computing and the graphical thickness deviation tolerance for solar photo-thermal absorber films with high-efficiency of more than 85% will be simulated. The optimized design for the chromaticity coordinates for the high-efficiency solar photo-thermal absorber films also will be simulated by the software having C/C++-CUDA parallel computing technology, and the database of the chromaticity coordinates and PTCEs will be established. The solar photo-thermal absorber films with wide color gamut and high PTCEs, will be fabricated by Electron-Beam Gun Evaporation. And their optical properties will be measured by UV-Vis-NIR spectrometer. Actual results purple coating of the absorber film, photothermal conversion efficiency of 95.27% and athickness of 96.3nm / 6nm / 86.1nm, and simulation errors are less than 2%; and then after thermal annealing, the efficiency dropped to 77% by XRD and EDS analysis should be affected by oxidation.