| Summary: | 碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 104 === This study is the use of a DC sputtering system in the growth of indium nitride porous aluminum substrate having a sensing layer of the humidity sensor, indium nitride humidity sensing element having two ends and rectification of the three-terminal impedance pn junction structure, metal-oxide half effector (Metal oxide semiconductor fieldeffect structure), a bipolar transistor (Bipolar junction transistor, BJT) semiconductor structure. Indium nitride humidity sensing element sensing layer can measure relative humidity and electrical relationship. The humidity sensor indium nitride ends and three terminal semiconductor sensed characteristic, changes in the relative humidity of 30% RH, 45% RH, 60% RH, 75% RH and when 90% RH, using indium nitride sense impedance change measured surface layer of adsorbed water gas generated by the discovery of indium nitride impedance value sensing layer, the capacitance and inductance values when the value will increase due to the relative humidity is proportional to drift and hysteresis when the current-voltage characteristic measured improvement , and indium nitride IV characteristics of the humidity sensing element is also affected by the relative humidity of the impact with the same result.
Keywords: multi-electrode, indium nitride, FET, humidity sensing
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