MgZnO/ZnO高電子移動率電晶體
碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 104 === In this experiment, the ZnO and MgZnO layers were deposited on sapphire substrate to form two-dimensional electron gas (2DEG) structure. Also the metal-semiconductor (M-S) and metal-oxide-semiconductor (MOS) field-effect transistor (FET) were fabric...
Main Authors: | Chung-Min Chu, 朱中敏 |
---|---|
Other Authors: | Jun-Dar Hwang |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/61597577757685398433 |
Similar Items
-
THE DEVICE PERFORMANCE CHARACTERISTICS OF ZnO/MgZnO LEDs
by: CHI-HSIANG WANG, et al.
Published: (2005) -
Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure
by: Huai-An Chin, et al.
Published: (2010) -
Hole Concentration Study of ZnO/MgZnO Heterostructure
by: Wei Hsuan Hsu, et al.
Published: (2015) -
Growth of ZnO nanowires/MgZnO thin film Heterostructures
by: Fong-yi chen, et al.
Published: (2008) -
Pulsed Laser Deposition of MgZnO Nanostructures on ZnO Films
by: Jia-Hao Zhang, et al.
Published: (2008)