Fabrication and characterization of CuAlOx-based resistive switching devices

碩士 === 國立彰化師範大學 === 光電科技研究所 === 104 === The resistive switching characteristics of the n-type CuAlOx thin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate is found. The conduction...

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Bibliographic Details
Main Authors: Chu,yu-ju, 朱宥儒
Other Authors: 林祐仲
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/24685106874794158438