| Summary: | 碩士 === 國立中央大學 === 光機電工程研究所 === 104 === The recent rise of flexible electronics industry aiming to deliver lightweight, flexible and large-area products has been extensively applied in the fields of display. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (OLED), making it difficult to be developed. In order to prolong OELD’s lifetime, water vapor transmittance rate (WVTR) must be below <10-6 g/m2/day. In this study, we used magnetron sputtering and hexamethyldisiloxane (HMDSO) to deposit SiO2:C buffer layer and SiO2 barrier film on PET substrate. Barrier film was deposited in high-density plasma produced by magnetron sputtering gun, oxygen, and fragmented HMDSO were mixed together under 1 10-3 torr to deposit dense films. Buffer layer was deposited in the same way as barrier film but rasing the HMDSO flow to improve the ratio of linear organic silicon oxide thin film structure which helps the film deposited on flexible substrate.In this study,we used 100 W RF power, 6sccm O2and 0.4 sccm HMDSO to deposit a film with low porosity and high transmittance. WVTR of the film reached the value of 0.05 g/m2/day, then we used100 W RF power, 6sccm O2and 1 sccm HMDSO to deposit a film which has rich methyl stack as buffer layer.In study we found three pairs of stacked film WVTR can be reduced to about 1/5 of single layer. It is believed that by combining organic and inorganic process, multilayer could meet OLED barrier requirement and will be used in OLED encapsulation industry in future.
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