| Summary: | 碩士 === 國立中央大學 === 光電科學與工程學系 === 104 === In this thesis, we fabricate the structure of the sample GMR (Giant MagnetoResistance) under a series of sub-micron scale ,and study the GMR in the ferromagnetic structure of magnetic moment of reversal mechanism changes by using the way between measuring magnetic field changes and the voltage difference
Based on GMR properties using a Wheatstone bridge system to make magnetoresistance structure of high/low resistance switching, and to study the influence in spacer layer film structure (Cu) and the Pinned layer (CoFe) of the magnetic moment reversal mechanism.
In this thesis, there are four different thickness samples of the spacer layer and pinned layer which the pinned layer thickness are 3.8nm and 4.2nm, and spacer layer thickness are 2.5nm and 2.8nm. Using lithography, plasma sputtering, anneal and magnetized to make the bridge structure having magnetic properties. We will use the Taguchi method (L422) to find the optimal design in different thicknesses of ferromagnetic and Anti-ferromagnetic in this experiment.
|
|---|
