Design, Simulation and Analysis of Depletion-mode Power MOSFET
碩士 === 國立中央大學 === 電機工程學系 === 104 === This research demonstrated the design, analysis, simulation, and characterization of a depletion-mode Power MOSFET with the rated breakdown voltage of 150 V and threshold voltage of -5 V. Impacts of different process conditions on both breakdown voltages and thre...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60785853034112960245 |