Combined first-principles and tight-binding Hamiltonian study of Fe-MgO-Fe magnetic tunnel junctions
碩士 === 國立中央大學 === 物理學系 === 104 === In recent years, the nonvolatile, fast reading and writing and low-power consuming magnetoresistive random access memory (MRAM) has been widely used. Based on the development of the oxide-based heteroepitaxy in magnetic tunnel junctions (MTJs), the high tunneling m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nmr2rm |